DocumentCode
1947413
Title
Design and Characterisation of High-Performance 0.13 μm NMOS Devices
Author
Schmitz, J. ; Paulzen, G.M. ; Gravesteijn, D.J. ; Montree, A.H. ; Woerlee, P.H.
Author_Institution
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
329
Lastpage
332
Abstract
We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5437045
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