DocumentCode :
1947584
Title :
SRAM-based extraction of defect characteristics
Author :
Khare, Jitendra ; Maly, Wojciech ; Griep, Susanne ; Schmitt-Landsiedel, Doris
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
1994
fDate :
22-25 Mar 1994
Firstpage :
98
Lastpage :
107
Abstract :
In modern IC manufacturing, extraction of defect characteristics for yield estimation is of prime importance. Test structure based defect characterization procedures suffer from two drawbacks-wastage of silicon area and short-loop mode of operation. This paper presents a SRAM-based characterization methodology, which can eliminate both the above drawbacks. The application of this methodology is also illustrated by means of an industrial experiment, which indicates that the procedure can be applied to all defect types for which the SRAM monitor has a high resolution of diagnosis
Keywords :
SRAM chips; integrated circuit manufacture; semiconductor process modelling; IC manufacturing; SRAM monitor; SRAM-based extraction; defect characteristics; defect types; diagnostic resolution; industrial experiment; yield estimation; Circuit faults; Computer aided manufacturing; Manufacturing industries; Modems; Monitoring; Random access memory; Semiconductor device manufacture; Silicon; Testing; Yield estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
Type :
conf
DOI :
10.1109/ICMTS.1994.303494
Filename :
303494
Link To Document :
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