DocumentCode
1947651
Title
Temperature dependence of the squeezing bandwidth of sub-Poissonian light from a light-emitting diode
Author
Abe, J. ; Hirano, T. ; Kuga, T. ; Yamanishi, M.
Author_Institution
Inst. of Phys., Tokyo Univ., Japan
fYear
1998
fDate
8-8 May 1998
Firstpage
123
Lastpage
124
Abstract
Summary form only given.We have measured the squeezing bandwidth as a function of the operating temperature. The experimental setup is shown. A LED (Hitachi HE8812SG), which is a GaAlAs LED with a double heterojunction structure, is connected through a metal-film resistor (R) to a constant voltage power supply, and generates sub-Poissonian light.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; optical squeezing; GaAlAs; GaAlAs LED; Hitachi HE8812SG; LED; constant voltage power supply; double heterojunction structure; light-emitting diode; metal-film resistor; operating temperature; squeezing bandwidth; sub-Poissonian light generation; temperature dependence; Bandwidth; Capacitance; Current measurement; Electron emission; Feedback; Fluctuations; Heterojunctions; Light emitting diodes; Physics; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680264
Filename
680264
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