Title :
Temperature dependence of the squeezing bandwidth of sub-Poissonian light from a light-emitting diode
Author :
Abe, J. ; Hirano, T. ; Kuga, T. ; Yamanishi, M.
Author_Institution :
Inst. of Phys., Tokyo Univ., Japan
Abstract :
Summary form only given.We have measured the squeezing bandwidth as a function of the operating temperature. The experimental setup is shown. A LED (Hitachi HE8812SG), which is a GaAlAs LED with a double heterojunction structure, is connected through a metal-film resistor (R) to a constant voltage power supply, and generates sub-Poissonian light.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; optical squeezing; GaAlAs; GaAlAs LED; Hitachi HE8812SG; LED; constant voltage power supply; double heterojunction structure; light-emitting diode; metal-film resistor; operating temperature; squeezing bandwidth; sub-Poissonian light generation; temperature dependence; Bandwidth; Capacitance; Current measurement; Electron emission; Feedback; Fluctuations; Heterojunctions; Light emitting diodes; Physics; Temperature dependence;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680264
