Title :
A New Method for the Extraction of MOSFET Parameters at Ambient and Liquid Helium Temperatures
Author :
Balestra, F. ; Hafez, I. ; Ghibaudo, G.
Author_Institution :
Laboratoire de Physique des Composants a Semiconducteurs (CNRS-UA), ENSERG/INPG, 23, Av. des Martyrs, F-38031 Grenoble Cedex, France
Abstract :
An original method for MOSFET parameter extraction is presented as a function of temperature. This method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage and mobility parameters.
Keywords :
Capacitance; Helium; MOSFET circuits; Nitrogen; Parameter extraction; Temperature distribution; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
