Title :
Self-stressing structures for electromigration testing to 500 MHz
Author :
Snyder, Eric S. ; Pierce, Donald G. ; Campbell, David V. ; Swanson, Scot E.
Author_Institution :
Electron. Quality/Reliability Center, Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We demonstrate for the first time high frequency (500 MHz) electromigration at the wafer-level using on-chip, self-stressing test structures. Since the stress temperature, frequency, duty cycle and current are controlled by DC signals in these structures, we used conventional DC test equipment without any special modifications (such as high frequency cabling, high temperature probe cards, etc.). This structure significantly reduces the cost of performing realistic high frequency electromigration experiments
Keywords :
circuit reliability; electromigration; integrated circuit testing; metallisation; 500 MHz; DC signals; DC test equipment; IC metallisation failure; electromigration testing; high frequency electromigration; onchip test structures; self-stressing test structures; wafer-level; Automatic testing; Circuit testing; Costs; Current density; Electromigration; Electronic equipment testing; Frequency; Hafnium; Stress control; Temperature;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303502
