Self-stressing structures for electromigration testing to 500 MHz

Author

Snyder, Eric S. ; Pierce, Donald G. ; Campbell, David V. ; Swanson, Scot E.

Author_Institution

Electron. Quality/Reliability Center, Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

62

Lastpage

67

Abstract

We demonstrate for the first time high frequency (500 MHz) electromigration at the wafer-level using on-chip, self-stressing test structures. Since the stress temperature, frequency, duty cycle and current are controlled by DC signals in these structures, we used conventional DC test equipment without any special modifications (such as high frequency cabling, high temperature probe cards, etc.). This structure significantly reduces the cost of performing realistic high frequency electromigration experiments

Keywords

circuit reliability; electromigration; integrated circuit testing; metallisation; 500 MHz; DC signals; DC test equipment; IC metallisation failure; electromigration testing; high frequency electromigration; onchip test structures; self-stressing test structures; wafer-level; Automatic testing; Circuit testing; Costs; Current density; Electromigration; Electronic equipment testing; Frequency; Hafnium; Stress control; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303502

Filename

303502