DocumentCode :
1947872
Title :
Non Destructive Electrical Characterization of Semiconducting Layers by a Novel Microwave Method
Author :
Tabourier, P. ; Druon, C. ; Bourzgui, N. ; Wacrenier, J.H.
Author_Institution :
Université des Sciences de Lille Flandres-Artois, Centre Hyperfréquences et Semiconducteurs, U.A. CNRS 287, Bâtiment P3 - 59655 - VILLENEUVE D´´ASCQ CEDEX (France)
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
933
Lastpage :
935
Abstract :
We propose a microwave device using a novel cell which allows one to measure the sheet resistance (Rn), the carrier density (n) and the mobility (¿) of epitaxial layers. The electrical contacts between the sample and the cell are capacitive. The method is non-destructive and doesn´t require any technological process. Measurements can be performed within the following ranges : 5 ¿ ≪ R ≪ 2500 ¿; 100 cm2/V.s. ≪ ¿ ; 5 1015cm¿3 ≪ n ≪ 5 1018 cm¿3
Keywords :
Charge carrier density; Contacts; Density measurement; Electric resistance; Electrical resistance measurement; Epitaxial layers; Microwave devices; Microwave measurements; Microwave theory and techniques; Semiconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5437064
Link To Document :
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