• DocumentCode
    1947872
  • Title

    Non Destructive Electrical Characterization of Semiconducting Layers by a Novel Microwave Method

  • Author

    Tabourier, P. ; Druon, C. ; Bourzgui, N. ; Wacrenier, J.H.

  • Author_Institution
    Université des Sciences de Lille Flandres-Artois, Centre Hyperfréquences et Semiconducteurs, U.A. CNRS 287, Bâtiment P3 - 59655 - VILLENEUVE D´´ASCQ CEDEX (France)
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    933
  • Lastpage
    935
  • Abstract
    We propose a microwave device using a novel cell which allows one to measure the sheet resistance (Rn), the carrier density (n) and the mobility (¿) of epitaxial layers. The electrical contacts between the sample and the cell are capacitive. The method is non-destructive and doesn´t require any technological process. Measurements can be performed within the following ranges : 5 ¿ ≪ R ≪ 2500 ¿; 100 cm2/V.s. ≪ ¿ ; 5 1015cm¿3 ≪ n ≪ 5 1018 cm¿3
  • Keywords
    Charge carrier density; Contacts; Density measurement; Electric resistance; Electrical resistance measurement; Epitaxial layers; Microwave devices; Microwave measurements; Microwave theory and techniques; Semiconductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5437064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1947872