DocumentCode
1947922
Title
Characterization of Shallow Junction Ion Implantation Profiles: Correlation Between a Noncontact Photodisplacement Thermal Wave Technique and Rutherford Backscattering Analysis
Author
Crean, G.M. ; Jeynes, C. ; Somekh, M.G. ; Webb, R.P.
Author_Institution
National Microelectonics Research Centre, University College, Lee Maltings, Prospect Row, Cork, Ireland.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
929
Lastpage
932
Abstract
This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.
Keywords
Backscatter; Boron; Educational institutions; Fabrication; Implants; Impurities; Ion implantation; Lattices; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5437067
Link To Document