An automated wafermap fast test for bipolar induced breakdown in NMOS transistors

Author

Gaston, G.J. ; Bold, B.S. ; Mason, J.B.

Author_Institution

GEC Plessey Semiconductors Ltd., Plymouth, UK

fYear

1994

fDate

22-25 Mar 1994

Firstpage

28

Lastpage

32

Abstract

A fast wafermap test for the characterisation of bipolar induced breakdown in NMOS transistors has been developed. The technique utilises the peak of a plot of Iwell/Idrain (at peak substrate current conditions) to provide an efficient, repeatable and easily quantifiable measurement of the breakdown voltage. The technique has been performed successfully for different technologies giving good agreement with existing techniques. The effect of pwell contact placement, leff, Vgs/Vds ratio and temperature has also been investigated

Keywords

automatic testing; electric breakdown of solids; insulated gate field effect transistors; semiconductor device testing; Iwell/Idrain plot; NMOS transistors; automated wafermap fast test; bipolar induced breakdown; breakdown voltage; peak substrate current conditions; pwell contact placement; Automatic testing; Breakdown voltage; Current measurement; Electric breakdown; Electrons; Hot carriers; MOS devices; MOSFETs; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303508

Filename

303508