DocumentCode :
1948002
Title :
Hot-Carrier-Induced Degradation Mechanisms and Anomalous Leakage Current in Hydrogen-Passivated Polysilicon-on-Insulator, LDD p-Mosfet´s
Author :
Bhattacharya, S. ; Banerjee, S. ; Nguyen, B.Y. ; Tobin, P.
Author_Institution :
University of Texas
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
62
Lastpage :
63
Keywords :
Degradation; Fabrication; Grain boundaries; Hot carriers; Leakage current; MOSFET circuits; Microelectronics; Temperature dependence; Transconductance; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664795
Filename :
664795
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1948002
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