• DocumentCode
    1948002
  • Title

    Hot-Carrier-Induced Degradation Mechanisms and Anomalous Leakage Current in Hydrogen-Passivated Polysilicon-on-Insulator, LDD p-Mosfet´s

  • Author

    Bhattacharya, S. ; Banerjee, S. ; Nguyen, B.Y. ; Tobin, P.

  • Author_Institution
    University of Texas
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    62
  • Lastpage
    63
  • Keywords
    Degradation; Fabrication; Grain boundaries; Hot carriers; Leakage current; MOSFET circuits; Microelectronics; Temperature dependence; Transconductance; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664795
  • Filename
    664795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1948002