Title :
Test structures for extraction of MOSFET capacitances
Author :
Gaffur, Husam ; Yoon, Sukyoon
Author_Institution :
Fairchild Res. Center, Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
The MOSFET device capacitors are very important for device and circuit modeling. This paper addresses a unique test structures to extract the device junction capacitance and to separate the peripheral capacitance into a channel and field edge components. A new simple structure has been developed to extract the device gate overlap capacitance. The implementation of these structures were successfully evaluated for submicron CMOS process
Keywords :
capacitance; capacitance measurement; insulated gate field effect transistors; semiconductor device testing; MOSFET device capacitors; capacitance extraction; channel components; circuit modeling; device gate overlap capacitance; device junction capacitance; device modeling; field edge components; peripheral capacitance; submicron CMOS process; test structures; CMOS process; Capacitance measurement; Capacitors; Circuit simulation; Circuit testing; Doping; Equations; Implants; MOSFET circuits; Semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303511
