DocumentCode

1948150

Title

New Electronic Device Opportunities Afforded by GaN-based materials

Author

Mishra, Umesh K.

Author_Institution

University of California, Santa Barbara, CA, USA

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

17

Lastpage

20

Keywords

Cathodes; Electron mobility; Gallium nitride; HEMTs; MOCVD; MODFETs; Microwave devices; Power generation; Silicon carbide; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505444