Title :
New Electronic Device Opportunities Afforded by GaN-based materials
Author :
Mishra, Umesh K.
Author_Institution :
University of California, Santa Barbara, CA, USA
Keywords :
Cathodes; Electron mobility; Gallium nitride; HEMTs; MOCVD; MODFETs; Microwave devices; Power generation; Silicon carbide; Thermal conductivity;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
