DocumentCode :
1948225
Title :
Silicon-on-Diamond Technology
Author :
Annamalai, N.K. ; Fechner, Paul ; Sawyer, Jon
Author_Institution :
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
64
Lastpage :
65
Keywords :
Capacitance-voltage characteristics; Conducting materials; Dielectrics and electrical insulation; Integrated circuit technology; MISFETs; MOS capacitors; Silicon on insulator technology; Substrates; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664796
Filename :
664796
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1948225
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