• DocumentCode
    1948226
  • Title

    An electrostatically-actuated MEMS switch for power applications

  • Author

    Wong, Jo-Ey ; Lang, Jeffrey H. ; Schmidt, Martin A.

  • Author_Institution
    MIT, Cambridge, MA, USA
  • fYear
    2000
  • fDate
    23-27 Jan 2000
  • Firstpage
    633
  • Lastpage
    638
  • Abstract
    This paper presents the design, analysis, fabrication, and testing of an electrostatically-actuated MEMS power switch. The device can be switched electrostatically (20 V), pneumatically (1200 Pa), or through combined actuation. Prototype switches carry currents in excess of 400 mA in either current direction with a contact resistance as low as 14 mΩ. Their off-state resistance is higher than the 30 MΩ limit of the test equipment. Breakdown voltages of 300 V have been achieved across their small air gaps. Their nominal switching time is 20 ms. Extended lifetime testing has not been carried out but our tests to date show that the prototype switches operate more than 4000 cycles without significant degradation in their contact resistance. Finally, a protective switching scheme is proposed to minimize contact wear due to arcing during switch opening and closing
  • Keywords
    contact resistance; electrostatic actuators; life testing; power semiconductor switches; switchgear testing; wear; 1200 Pa; 14 mohm; 20 V; 20 ms; 30 Mohm; 300 V; 400 mA; arcing; breakdown voltages; contact resistance; contact wear; degradation; electrostatically-actuated MEMS switch; extended lifetime testing; nominal switching time; off-state resistance; power applications; protective switching; rototype switches; switch closing; switch opening; Air gaps; Contact resistance; Electrostatic analysis; Fabrication; Life testing; Micromechanical devices; Microswitches; Prototypes; Switches; Test equipment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
  • Conference_Location
    Miyazaki
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5273-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2000.838592
  • Filename
    838592