Title :
Impact of plasma-charging damage to the scaling limit of thin gate-oxide
Author_Institution :
Lucent Technologies, USA
Keywords :
Annealing; Current density; Electrons; Plasma density; Plasma devices; Plasma measurements; Stress; Testing; Tunneling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
