DocumentCode :
1948515
Title :
Device Characteristics of Metal Gate MOSFETs utilizing Denudation of WNx on Polycrystalline Si
Author :
Huh, Kijae ; Kim, Kwan ; Song, Duheon ; Lee, Sangdon
Author_Institution :
LG Semicon Co. Ltd., Cheongju, Korea
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
144
Lastpage :
147
Keywords :
Annealing; Conductivity; Delay; Electrodes; Heat treatment; Inorganic materials; MIM capacitors; MOSFET circuits; Resistance heating; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1948515
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