• DocumentCode
    1948553
  • Title

    Investigations of Dual Ge Gate Integration in Advanced CMOS Process

  • Author

    Alieu, J. ; Jurczak, M. ; Skotnicki, T. ; Bremond, G. ; Souifi, K. ; Paoli, M. ; Bensahel, D. ; Galvier, J. ; Haond, M.

  • Author_Institution
    CNET/STMicroelectronics, Crolles, France and LPM INSA Lyon, Villeurbanne, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    152
  • Lastpage
    155
  • Keywords
    Boron; CMOS process; Doping; Germanium silicon alloys; Life estimation; MOS devices; Silicon germanium; Telecommunications; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1948553