Title :
Investigations of Dual Ge Gate Integration in Advanced CMOS Process
Author :
Alieu, J. ; Jurczak, M. ; Skotnicki, T. ; Bremond, G. ; Souifi, K. ; Paoli, M. ; Bensahel, D. ; Galvier, J. ; Haond, M.
Author_Institution :
CNET/STMicroelectronics, Crolles, France and LPM INSA Lyon, Villeurbanne, France
Keywords :
Boron; CMOS process; Doping; Germanium silicon alloys; Life estimation; MOS devices; Silicon germanium; Telecommunications; Testing; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
