مرکز منطقه ای اطلاع رساني علوم و فناوري - Impact of Plasma Density and Pattern Aspect Ratio on Plasma Damage in deep submicron CMOS technologies

DocumentCode :

1948608

Title :

Impact of Plasma Density and Pattern Aspect Ratio on Plasma Damage in deep submicron CMOS technologies

Author :

Creusen, Martin ; Van den bosch, G. ; van der Groen, S. ; Groeseneken, Guido ; Ackaert, Jan ; De Backer, Eddy

Author_Institution :

IMEC, Leuven, Belgium

Volume :

fYear :

1999

fDate :

13-15 Sept. 1999

Firstpage :

164

Lastpage :

167

Keywords :

CMOS process; CMOS technology; Dielectric losses; Electrons; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Sputter etching; Testing;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location :

Leuven, Belgium

Print_ISBN :

2-86332-245-1

Type :

conf

Filename :

1505465

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1948608