Title :
Subthyristor measurements for technology analysis on GTO thyristors
Author :
Biermann, Gerhard
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
A system for measuring the subthyristor parameters of GTO (gate-turn-off) thyristors is presented. With the aid of a personal computer the gate breakdown voltage and leakage current, the turn-on and turn-off times, and the forward voltage drop of each subthyristor can be automatically measured, stored, and statistically evaluated. The cumulative frequency and distribution of the gate breakdown voltages on an ordinary pellet are discussed. A further example shows the distributions of gate breakdown voltage and turn-off times on a pellet with a doping inhomogeneity.<>
Keywords :
electric breakdown of solids; thyristor applications; GTO thyristors; doping inhomogeneity; forward voltage drop; gate breakdown voltage; gate-turn-off; leakage current; personal computer; subthyristor parameters; turn-off; turn-on; Breakdown voltage; Cathodes; Current measurement; Leakage current; Microcomputers; Needles; Pulse measurements; Switches; Thyristors; Time measurement;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96809
