• DocumentCode
    1948692
  • Title

    Simulation of Interface Coupling and Short-Channel Effects in Fully-Depleted Soi Mosfet´s

  • Author

    Hassein-Bey, A. ; Cristoloveanu, S.

  • Author_Institution
    Laboratoire de Physique des Composants & Semiconducteurs, France
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    68
  • Lastpage
    69
  • Keywords
    Degradation; Fabrication; Gaussian processes; Hot carriers; MOSFET circuits; Nonlinear equations; Poisson equations; Semiconductor films; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664798
  • Filename
    664798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1948692