Title :
Impact of Random Dopant Placement on CMOS Delay and Power Dissipation
Author :
Tang, Xinghai ; Bowman, Keith A. ; Eble, John C. ; De, Vivek K. ; Meindl, James D.
Author_Institution :
Georgia Institute of Technology, Atlanta, GA, USA
Keywords :
Analytical models; Delay effects; Density functional theory; Doping; Fluctuations; MOSFETs; Power dissipation; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
