Title :
Silicon carbide micro-reaction-sintering using a multilayer silicon mold
Author :
Sugimoto, Shinya ; Tanaka, Shuji ; Li, Jing-Feng ; Watanabe, Ryuzo ; Esashi, Masayoshi
Author_Institution :
Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
Abstract :
This paper describes a novel process, “Silicon Carbide Micro-reaction-sintering”, to fabricate high-aspect-ratio silicon carbide microstructures. This process consists of micromachining of silicon molds, filling of material powders ( a-silicon carbide, graphite, silicon and phenol resin) into the molds, bonding of the molds with adhesive and reaction-sintering by hot isostatic pressing (HIP). Using our process, we have successfully fabricated silicon carbide microrotors of 5 and 10 mm diameters for micromachined gas turbines. We observed the cross section of the microrotors with a scanning electron microscope (SEM). The SEM observation demonstrated that the material powder was densely reaction-sintered by HIP. We also investigated the compositions of the microrotors by X-ray diffraction (XRD) analysis. The XRD analyses proved that graphite in the material powder reacted with melted silicon derived from the mold, and consequently β-silicon carbide was produced around the α-silicon carbide originally included in the material powder
Keywords :
X-ray diffraction; ceramics; gas turbines; hot pressing; micromachining; moulding; rotors; scanning electron microscopy; silicon compounds; sintering; SiC; X-ray diffraction; fabrication; gas turbine; high-aspect-ratio microstructure; hot isostatic pressing; micromachining; microrotor; multilayer silicon mold; scanning electron microscopy; silicon carbide micro-reaction-sintering; Filling; Hip; Micromachining; Microstructure; Nonhomogeneous media; Powders; Resins; Scanning electron microscopy; Silicon carbide; X-ray scattering;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838616