DocumentCode
1948930
Title
Recombination of Oxidation-Induced Silicon Interstitials at Si/siO/sub 2/ Interfaces in Soi Structures
Author
Boussey-Said, J. ; Guillemot, N. ; Stoemenos, J.
Author_Institution
Department of Physics, University of Thessaloniki, Greece
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
70
Lastpage
71
Keywords
Microelectronics; Optical buffering; Optical microscopy; Oxidation; Physics; Radiative recombination; Silicon devices; Silicon on insulator technology; Stacking; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664799
Filename
664799
Link To Document