Title :
Fast opening GaAs photoconductive switch controlled pulsed power system
Author :
Funk, E.E. ; Lee, C.H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. A GaAs photoconductive opening switch controlled pulsed power system has been demonstrated which produces a 6 kV, 70 kW pulse with a risetime of less than 10 ns and a power gain of 10. The GaAs photoconductive switch is the essential element in the pulsed power system. The GaAs switch exhibits a conductivity that is sustained for more than 100 ns beyond the laser pulse when switched into a high impedance (500 /spl Omega/) load. This sustained conductivity even occurs at charging voltages that are well below the critical "lock-on" voltage. It is believed that the sustained conductivity and fast opening of the switch may be related to carrier injection at the switch contacts.
Keywords :
photoconducting switches; 10 ns; 100 ns; 500 ohm; 6 kV; 70 kW; GaAs; carrier injection; fast opening GaAs photoconductive switch; high impedance load; laser pulse; pulsed power system; risetime; semiconductor; switch contacts; Conductivity; Control systems; Gallium arsenide; Impedance; Optical pulses; Photoconductivity; Power system control; Pulse power systems; Switches; Voltage;
Conference_Titel :
Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-1360-7
DOI :
10.1109/PLASMA.1993.593533
