Title :
Reviews and future prospects of low-voltage embedded RAMs
Author :
Itoh, Kiyoo ; Osada, Kenichi ; Kawahara, Takayuki
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Low-voltage high-density embedded (e-) RAMs, focusing on RAM cells and peripheral circuits, are described. First, challenges and trends in low-voltage e-RAMs are described based on the S/N issue of RAM cells, and leakage and speed-variation issues of peripheral circuits. Next, state-of-the-art low-voltage e-DRAMs and e-SRAMs are investigated, focusing on leakage-reduction circuits. Finally, future prospects for e-RAM cells and peripheral circuits are discussed in terms of low-voltage designs.
Keywords :
DRAM chips; SRAM chips; integrated circuit design; integrated circuit noise; leakage currents; low-power electronics; technological forecasting; RAM cells; SNR; e-DRAM; e-SRAM; high-density embedded RAM; leakage-reduction circuits; low-voltage design; low-voltage embedded RAM; peripheral circuits; speed variation; Circuits; Laboratories; Low voltage; Maintenance; Power dissipation; Random access memory; Research and development; Signal to noise ratio; Silicon compounds; Threshold voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358816
