Title :
An Soi Performance Sizing Using Transient Finite-Element Modeling
Author_Institution :
IBM Technology Products, Essex Junction, VT
Keywords :
CMOS technology; Capacitance; Circuits; Delay; Doping; Finite element methods; Inverters; Semiconductor device modeling; Semiconductor process modeling; Steady-state;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664801