Title :
Analytical modeling of MOSFET noise parameters for analog and RF applications
Author :
Asgaran, Saman ; Deen, M. Jamal ; Chen, Chih-Hung
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Simple analytical expressions for MOSFET noise parameters are presented and experimentally verified. The expressions are based on analytical modeling of MOSFET channel noise and are explicit functions of MOSFET geometrical and biasing conditions, hence useful for circuit design purposes. Good agreement between simulated and measured data is also demonstrated.
Keywords :
CMOS integrated circuits; MOS integrated circuits; MOSFET; analogue integrated circuits; integrated circuit design; radiofrequency integrated circuits; semiconductor device measurement; semiconductor device models; semiconductor device noise; MOSFET biasing conditions; MOSFET channel noise; MOSFET geometrical conditions; MOSFET noise parameters; RF applications; analog applications; analytical modeling; circuit design; down-scaled devices; measured data; simulated data; Analytical models; Application software; Circuit noise; Circuit synthesis; MOSFET circuits; Noise figure; Noise generators; Radio frequency; Solid modeling; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358827
