DocumentCode
1949372
Title
Design techniques for a 1-V operation Bluetooth RF transceiver
Author
Ugajin, Mamoru ; Yamagishi, Akihiro ; Kodate, Junichi ; Harada, Mitsuru ; Tsukahara, Tsuneo
Author_Institution
NTT Microsystem Integration Labs., Kanagawa, Japan
fYear
2004
fDate
3-6 Oct. 2004
Firstpage
393
Lastpage
400
Abstract
This paper describes circuit techniques for a 1-V operation Bluetooth PF transceiver in 0.2-μm CMOS/SOI. Folded LC-tuned and folded transistor-current-source circuits achieve 1-V operation of the RF transceiver. Tuning circuits and a bias generation circuit for robust transceiver operation are explained.
Keywords
Bluetooth; CMOS integrated circuits; circuit tuning; integrated circuit design; silicon-on-insulator; transceivers; 0.2 micron; 1 V; CMOS SOI Bluetooth RF transceiver; Si-SiO2; bias generation circuit; circuit techniques; design techniques; folded LC-tuned circuits; folded transistor-current-source circuits; robust transceiver operation; tuning circuits; Bluetooth; CMOS technology; Circuits; Filters; MOSFETs; Radio frequency; Switches; Transceivers; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN
0-7803-8495-4
Type
conf
DOI
10.1109/CICC.2004.1358832
Filename
1358832
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