DocumentCode :
1949372
Title :
Design techniques for a 1-V operation Bluetooth RF transceiver
Author :
Ugajin, Mamoru ; Yamagishi, Akihiro ; Kodate, Junichi ; Harada, Mitsuru ; Tsukahara, Tsuneo
Author_Institution :
NTT Microsystem Integration Labs., Kanagawa, Japan
fYear :
2004
fDate :
3-6 Oct. 2004
Firstpage :
393
Lastpage :
400
Abstract :
This paper describes circuit techniques for a 1-V operation Bluetooth PF transceiver in 0.2-μm CMOS/SOI. Folded LC-tuned and folded transistor-current-source circuits achieve 1-V operation of the RF transceiver. Tuning circuits and a bias generation circuit for robust transceiver operation are explained.
Keywords :
Bluetooth; CMOS integrated circuits; circuit tuning; integrated circuit design; silicon-on-insulator; transceivers; 0.2 micron; 1 V; CMOS SOI Bluetooth RF transceiver; Si-SiO2; bias generation circuit; circuit techniques; design techniques; folded LC-tuned circuits; folded transistor-current-source circuits; robust transceiver operation; tuning circuits; Bluetooth; CMOS technology; Circuits; Filters; MOSFETs; Radio frequency; Switches; Transceivers; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
Type :
conf
DOI :
10.1109/CICC.2004.1358832
Filename :
1358832
Link To Document :
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