Title :
Reliability of Ultra-thin MOS Gate Oxides under Constant Voltage Stressing: Do They Break Down?
Author :
Xiang, Qi ; Wu, Yider ; Lin, Ming-Ren
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA, USA
Keywords :
Acceleration; Breakdown voltage; Circuits; Dielectric breakdown; Electric breakdown; Leakage current; Low voltage; MOSFETs; Stress; Testing;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
