DocumentCode :
1949625
Title :
Detailed Analysis of Short-Channel SOI DT-MOSFET
Author :
Ernst, T. ; Munteanu, D. ; Cristoloveanu, S. ; Pelloie, J.L. ; Faynot, O. ; Raynaud, C.
Author_Institution :
LPCS / ENSERG, Grenoble, France
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
380
Lastpage :
383
Keywords :
Circuits; Dynamic voltage scaling; MOSFETs; Predictive models; Scalability; Semiconductor device modeling; Temperature distribution; Threshold voltage; Transconductance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505519
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1949625
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