Title :
Memory trends - Session 20
Abstract :
This session presents trends in embedded and emerging memories including an overview of issues for advanced embedded SRAM and DRAM and discussion of high density FeRAM and tunnel junction MRAM. A novel gain cell using a single electron transistor for SRAM-type data storage is described along with a new ternary CAM macro and an on-chip programmable CMOS based OTP anti-fuse.
Keywords :
CADCAM; CMOS technology; Computer aided manufacturing; Ferroelectric films; Large-scale systems; Magnetic tunneling; Multivalued logic; Nonvolatile memory; Random access memory; Single electron transistors;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358847
