Title :
Ultra-Shallow extensions for industrial 0.15 um CMOS technology fabricated using Plasma Doping
Author :
Lenoble, D. ; Alieu, J. ; Grouillet, A. ; Haond, M. ; Felch, S.B. ; Goeckner, M.J. ; Fang, Z.
Author_Institution :
France Telecom CNET, Meylan, France
Keywords :
Annealing; CMOS process; CMOS technology; Degradation; Doping; Ion implantation; MOSFETs; Plasma applications; Plasma immersion ion implantation; Textile industry;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
