Title :
GaAs MESFET simulation with MINIMOS
Author :
Lindorfer, P. ; Selberherr, S.
Author_Institution :
Inst. fuer Mikroelektronik, Tech. Univ., Wien, Austria
Abstract :
The implementation of models allowing the simulation of GaAs MESFETs with MINIMOS 5, an integrated 2-D and 3-D device simulator for silicon MOSFETs, is described. Models for the Schottky contact and possible device geometries are shown. As an example, an n-channel T-gate MESFET with a 1.5- mu m gate length was simulated.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 1.5 micron; GaAs; MESFET simulation; MINIMOS; Schottky contact; boundary conditions; device geometries; gate length; integrated 2D/3D device simulator; models; n-channel T-gate MESFET; Analytical models; Boundary conditions; Charge carrier processes; Circuit simulation; Gallium arsenide; MESFETs; MOSFETs; Poisson equations; Silicon; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69342
