Title :
Pure CMOS one-time programmable memory using gate-ox anti-fuse
Author :
Ito, Hiroshi ; Namekawa, Toshimasa
Author_Institution :
SoC Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A pure CMOS one-time programmable (PCOP) memory is developed as electrically programmable nonvolatile memory for general purposes. The memory cell consists of a thin-oxide PMOS transistor, a thick-oxide NMOS barrier transistor and a selection transistor. It is programmed with the dielectric breakdown of the thin gate oxide. A high voltage generator is built-in so as to be programmable after packaging.
Keywords :
CMOS memory circuits; dielectric thin films; programmable circuits; random-access storage; semiconductor device breakdown; electrically programmable nonvolatile memory; gate-oxide anti-fuses; high voltage generator; post-packaging one-time programmable memory; pure CMOS OTP memory; selection transistor; thick-oxide NMOS barrier transistor; thin gate oxide dielectric breakdown; thin-oxide PMOS transistor; CMOS process; CMOS technology; Dielectric breakdown; Electric breakdown; Electrical resistance measurement; Fuses; MOSFETs; Nonvolatile memory; Redundancy; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358853
