DocumentCode :
1949827
Title :
High performance embedded RF passive device process integration
Author :
Li, H.Y. ; Khoo, Y.M. ; Khan, Navas ; Teoh, K.W. ; Rao, Vempati Srinivasa ; Li, H.B. ; Liao, E.B. ; Mohanraj, S. ; Kripesh, V. ; Rakesh, K.
Author_Institution :
Inst. of Microelectron., A*STAR, Singapore
fYear :
2008
fDate :
27-30 May 2008
Firstpage :
1709
Lastpage :
1713
Abstract :
We report the process evaluation and integration for the embedded RF passive device in this paper. Two sets of test vehicle were designed and fabricated for the evaluation of RF passive devices embedded in USG (undoped silicate glass) and BCB (Benzocylcobutene) dielectric. We encountered resistor uniformity issue and BCB capacitor limitation during the process set up. After process issue solving and final platform setting, resistor, capacitor, inductor and bandpass filter were integrated and the high performance functions were demonstrated.
Keywords :
capacitors; dielectric materials; microwave devices; resistors; BCB capacitor limitation; bandpass filter; benzocylcobutene dielectric; embedded RF passive device; process evaluation; process integration; resistor uniformity issue; undoped silicate glass; Band pass filters; Etching; Inductors; MIM capacitors; Metal-insulator structures; Packaging; Radio frequency; Resistors; Silicon compounds; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2008.4550210
Filename :
4550210
Link To Document :
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