High performance embedded RF passive device process integration

Author

Li, H.Y. ; Khoo, Y.M. ; Khan, Navas ; Teoh, K.W. ; Rao, Vempati Srinivasa ; Li, H.B. ; Liao, E.B. ; Mohanraj, S. ; Kripesh, V. ; Rakesh, K.

Author_Institution

Inst. of Microelectron., A*STAR, Singapore

fYear

2008

fDate

27-30 May 2008

Firstpage

1709

Lastpage

1713

Abstract

We report the process evaluation and integration for the embedded RF passive device in this paper. Two sets of test vehicle were designed and fabricated for the evaluation of RF passive devices embedded in USG (undoped silicate glass) and BCB (Benzocylcobutene) dielectric. We encountered resistor uniformity issue and BCB capacitor limitation during the process set up. After process issue solving and final platform setting, resistor, capacitor, inductor and bandpass filter were integrated and the high performance functions were demonstrated.

Keywords

capacitors; dielectric materials; microwave devices; resistors; BCB capacitor limitation; bandpass filter; benzocylcobutene dielectric; embedded RF passive device; process evaluation; process integration; resistor uniformity issue; undoped silicate glass; Band pass filters; Etching; Inductors; MIM capacitors; Metal-insulator structures; Packaging; Radio frequency; Resistors; Silicon compounds; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2008. ECTC 2008. 58th

Conference_Location

Lake Buena Vista, FL

ISSN

0569-5503

Print_ISBN

978-1-4244-2230-2

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2008.4550210

Filename

4550210