Title :
Effect of Thermal Ramping and Annealing Conditions on Defect Formation in Oxygen Implanted Silicon-On-Insulator Material
Author :
Krause, S.J. ; Park, J.C. ; Lee, J.D. ; El-Ghor, M. ; Roitman, P.
Author_Institution :
Arizona State University
Keywords :
Argon; Circuit faults; Inorganic materials; Instruments; NIST; Oxygen; Rapid thermal annealing; Rapid thermal processing; Silicon on insulator technology; Stacking;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664804
