DocumentCode :
1950032
Title :
Improved Hybrid MOSFET/driver Switching Module for pulsed power applications
Author :
Tang, T. ; Burkhart, C.
Author_Institution :
SLAC Nat. Accel. Lab., Menlo Park, CA, USA
fYear :
2011
fDate :
19-23 June 2011
Firstpage :
1365
Lastpage :
1368
Abstract :
Currently, there is no commercially available high voltage power MOSFET suitable for ultra-fast (~1ns switching) short pulse (~5ns) generation. A Hybrid MOSFET/driver Switching Module (HSM) has been demonstrated at the SLAC National Accelerator Laboratory, which is capable of generating a 1 kV, 1 ns rise time pulse across a 30 ohm load. This HSM is under development for use in the ILC damping ring kickers, which require modulators that can deliver ±5 kV pulses with a 2 ns flattop and 1 ns rise and fall time at a 6 MHz burst pulse repetition frequency. The HSM is also very attractive for the proposed Project X broadband chopper which requires similar switching speed (~1 ns) and pulse width (~4 ns). A second generation HSM is under development with improved modularity, increased power handling capability, and reduced minimum pulse width. Details of this HSM design and initial test results are presented in this paper.
Keywords :
driver circuits; power MOSFET; pulsed power supplies; ILC damping ring kickers; SLAC National Accelerator Laboratory; frequency 6 MHz; improved hybrid MOSFET-driver switching module; project X broadband chopper; pulsed power applications·; second generation HSM; time 1 ns; time 2 ns; time 4 ns; ultrafast short pulse generation; voltage -5 kV; voltage 1 kV; voltage 5 kV; Assembly; Attenuators; Flip chip; Logic gates; Power MOSFET; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference (PPC), 2011 IEEE
Conference_Location :
Chicago, IL
ISSN :
2158-4915
Print_ISBN :
978-1-4577-0629-5
Type :
conf
DOI :
10.1109/PPC.2011.6191616
Filename :
6191616
Link To Document :
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