DocumentCode
1950032
Title
Improved Hybrid MOSFET/driver Switching Module for pulsed power applications
Author
Tang, T. ; Burkhart, C.
Author_Institution
SLAC Nat. Accel. Lab., Menlo Park, CA, USA
fYear
2011
fDate
19-23 June 2011
Firstpage
1365
Lastpage
1368
Abstract
Currently, there is no commercially available high voltage power MOSFET suitable for ultra-fast (~1ns switching) short pulse (~5ns) generation. A Hybrid MOSFET/driver Switching Module (HSM) has been demonstrated at the SLAC National Accelerator Laboratory, which is capable of generating a 1 kV, 1 ns rise time pulse across a 30 ohm load. This HSM is under development for use in the ILC damping ring kickers, which require modulators that can deliver ±5 kV pulses with a 2 ns flattop and 1 ns rise and fall time at a 6 MHz burst pulse repetition frequency. The HSM is also very attractive for the proposed Project X broadband chopper which requires similar switching speed (~1 ns) and pulse width (~4 ns). A second generation HSM is under development with improved modularity, increased power handling capability, and reduced minimum pulse width. Details of this HSM design and initial test results are presented in this paper.
Keywords
driver circuits; power MOSFET; pulsed power supplies; ILC damping ring kickers; SLAC National Accelerator Laboratory; frequency 6 MHz; improved hybrid MOSFET-driver switching module; project X broadband chopper; pulsed power applications·; second generation HSM; time 1 ns; time 2 ns; time 4 ns; ultrafast short pulse generation; voltage -5 kV; voltage 1 kV; voltage 5 kV; Assembly; Attenuators; Flip chip; Logic gates; Power MOSFET; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference (PPC), 2011 IEEE
Conference_Location
Chicago, IL
ISSN
2158-4915
Print_ISBN
978-1-4577-0629-5
Type
conf
DOI
10.1109/PPC.2011.6191616
Filename
6191616
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