• DocumentCode
    1950032
  • Title

    Improved Hybrid MOSFET/driver Switching Module for pulsed power applications

  • Author

    Tang, T. ; Burkhart, C.

  • Author_Institution
    SLAC Nat. Accel. Lab., Menlo Park, CA, USA
  • fYear
    2011
  • fDate
    19-23 June 2011
  • Firstpage
    1365
  • Lastpage
    1368
  • Abstract
    Currently, there is no commercially available high voltage power MOSFET suitable for ultra-fast (~1ns switching) short pulse (~5ns) generation. A Hybrid MOSFET/driver Switching Module (HSM) has been demonstrated at the SLAC National Accelerator Laboratory, which is capable of generating a 1 kV, 1 ns rise time pulse across a 30 ohm load. This HSM is under development for use in the ILC damping ring kickers, which require modulators that can deliver ±5 kV pulses with a 2 ns flattop and 1 ns rise and fall time at a 6 MHz burst pulse repetition frequency. The HSM is also very attractive for the proposed Project X broadband chopper which requires similar switching speed (~1 ns) and pulse width (~4 ns). A second generation HSM is under development with improved modularity, increased power handling capability, and reduced minimum pulse width. Details of this HSM design and initial test results are presented in this paper.
  • Keywords
    driver circuits; power MOSFET; pulsed power supplies; ILC damping ring kickers; SLAC National Accelerator Laboratory; frequency 6 MHz; improved hybrid MOSFET-driver switching module; project X broadband chopper; pulsed power applications·; second generation HSM; time 1 ns; time 2 ns; time 4 ns; ultrafast short pulse generation; voltage -5 kV; voltage 1 kV; voltage 5 kV; Assembly; Attenuators; Flip chip; Logic gates; Power MOSFET; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference (PPC), 2011 IEEE
  • Conference_Location
    Chicago, IL
  • ISSN
    2158-4915
  • Print_ISBN
    978-1-4577-0629-5
  • Type

    conf

  • DOI
    10.1109/PPC.2011.6191616
  • Filename
    6191616