Title :
The Enhancement of Gate-Induced-Drain-Leakage (gidl) Current in Soi Mosfet and its Impact on Soi Device Scaling
Author :
Chen, Jian ; Assaderaghi, Fariborz ; Ko, Ping-Keung ; Hu, Chenming
Author_Institution :
Department of Electrical Engineering and Computer Sciences, UC Berkeley
Keywords :
Annealing; Boron; CMOS technology; Current measurement; Leakage current; MOS devices; MOSFET circuits; Semiconductor films; Substrates; Tunneling;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664806
