• DocumentCode
    1950205
  • Title

    The Enhancement of Gate-Induced-Drain-Leakage (gidl) Current in Soi Mosfet and its Impact on Soi Device Scaling

  • Author

    Chen, Jian ; Assaderaghi, Fariborz ; Ko, Ping-Keung ; Hu, Chenming

  • Author_Institution
    Department of Electrical Engineering and Computer Sciences, UC Berkeley
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    84
  • Lastpage
    85
  • Keywords
    Annealing; Boron; CMOS technology; Current measurement; Leakage current; MOS devices; MOSFET circuits; Semiconductor films; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664806
  • Filename
    664806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1950205