DocumentCode :
1950234
Title :
Time and frequency domain memory channel characterization and correlation methodology
Author :
Mintarno, Evelyn ; Ji, Steven
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2008
fDate :
27-30 May 2008
Firstpage :
1825
Lastpage :
1831
Abstract :
First, this paper discusses a robust and efficient de- embedding technique that can be used for TDR-PNA- simulation correlation in time or frequency domain. Employing the de-embedding technique, TDR-PNA was shown to correlate very well with 2 mV resolution in time- domain, when TDR repeatability is 2 mV. Next, a systematic analysis of memory channel TDR-simulation correlation was detailed. Time domain correlation served as an efficient and straightforward way of capturing impedance discontinuities and crosstalk level. Finally, some design, modeling, and measurement guidelines for platform memory interconnect development were recommended.
Keywords :
memory architecture; time-domain reflectometry; TDR-PNA- simulation correlation; correlation methodology; crosstalk level; deembedding technique; impedance discontinuities; memory channel characterization; time domain correlation; Cables; Calibration; Crosstalk; Frequency domain analysis; Impedance; Integrated circuit interconnections; Presence network agents; Probes; Scattering parameters; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2008.4550229
Filename :
4550229
Link To Document :
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