DocumentCode :
1950237
Title :
Resonant-Cavity-Enhanced Photodiode Using Silicon-on-Anything Technology
Author :
Sinnis, V.S. ; Seto, M. ; van Deurzen, M.H.W.A. ; Maas, H.G.R. ; Dekker, R. ; Alexander-Moonen, E.M.L. ; Hooft, G. W t ; Hoekstra, W. ; de Boer, W.B. ; Theunissen, M.J.J. ; Morrison, A.P.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
524
Lastpage :
527
Keywords :
Absorption; Gallium arsenide; Germanium silicon alloys; High speed optical techniques; Leakage current; Mirrors; Photodiodes; Reflectivity; Resonance; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505555
Link To Document :
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