DocumentCode

1950371

Title

Analysis of the Latch and Breakdown Phenomena in Thin Film Soi Mosfet´s As a Function of Temperature

Author

Balestra, F. ; Jomaah, J.

Author_Institution

ENSERG/lNPG, France

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

86

Lastpage

87

Keywords

Electric breakdown; Helium; Latches; Leakage current; MOSFET circuits; Nitrogen; Semiconductor films; Temperature; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664807

Filename

664807