DocumentCode :
1950536
Title :
Hot-Carrier Induced Interface Degradation in Jet Vapor Deposited SiN MNSFETs as Studied by a Novel Charge Pumping Technique
Author :
Mahapatra, S. ; Ramgopal Rao, V. ; Parikh, C.D. ; Vasi, J. ; Cheng, B. ; Khare, M. ; Woo, J.C.S.
Author_Institution :
Indian Institute of Technology, Bombay, India
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
592
Lastpage :
595
Keywords :
Charge pumps; Dielectric substrates; High K dielectric materials; Hot carriers; Leakage current; MOSFETs; Silicon compounds; Thermal degradation; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505572
Link To Document :
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