DocumentCode :
1950627
Title :
Trade-Off Between Programming Speed and Current Absorption in Flash EEPROM Memories
Author :
Esseni, David ; Giannasi, Fabrizio ; Riccò, Bruno ; Villa, Corrado
Author_Institution :
University of Bologna, Italy
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
612
Lastpage :
615
Keywords :
Absorption; Bandwidth; EPROM; Functional programming; Intrusion detection; Parallel programming; Random access memory; Read only memory; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505577
Link To Document :
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