• DocumentCode
    1950740
  • Title

    Integration difficulties and limitations in sub-0.25 μm CMOS and CMOS-based technologies

  • Author

    Deferm, Ludo ; Badenes, Gonçal

  • Author_Institution
    Silicon Device & Process Integration Div., IMEC, Leuven, Belgium
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    399
  • Abstract
    Market demands, which require increased functionality at lower costs are driving the development of high performance CMOS technologies with very high integration density. These demands are pushing the continuous scaling down of technologies and are resulting in a progressive acceleration of the rate of introduction of new technology generations. Current research and development activities in CMOS technology are focused on scaling the 0.25 μm CMOS technology generation down to 0.18 μm or even 0.13 μm dimensions. While some of the process modules can be scaled down in a conventional way, in some cases severe limitations are reached and it is necessary to introduce major modifications to the process flow. In this paper we will present an overview of the main considerations to be kept in mind when scaling down to a 0.18 pm CMOS technology generation
  • Keywords
    CMOS integrated circuits; integrated circuit technology; 0.25 micron; CMOS technology scaling; integration density; CMOS process; CMOS technology; Costs; Etching; Lithography; Manufacturing processes; Production; Reproducibility of results; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.838721
  • Filename
    838721