Title :
SiGe technologies for wireless microwave and millimeter-wave applications
Author_Institution :
LAAS, Toulouse, France
Abstract :
This paper outlines the SiGe Technology in term of frequency performances, noise performances and power performances. The conclusions indicate that SiGe HBT technology are very promising for RF and microwave circuits featuring low noise behavior. We finally present the works that have been performed in the field of the improvement of the passive elements performances on silicon substrate
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; RF circuit; SiGe; SiGe HBT technology; microwave circuit; millimeter-wave circuit; noise; passive element; wireless communication; Circuit noise; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microwave technology; Millimeter wave technology; Silicon germanium; Wireless sensor networks;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838723
