DocumentCode
1950780
Title
SiGe technologies for wireless microwave and millimeter-wave applications
Author
Plana, Robert
Author_Institution
LAAS, Toulouse, France
Volume
2
fYear
2000
fDate
2000
Firstpage
415
Abstract
This paper outlines the SiGe Technology in term of frequency performances, noise performances and power performances. The conclusions indicate that SiGe HBT technology are very promising for RF and microwave circuits featuring low noise behavior. We finally present the works that have been performed in the field of the improvement of the passive elements performances on silicon substrate
Keywords
Ge-Si alloys; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; RF circuit; SiGe; SiGe HBT technology; microwave circuit; millimeter-wave circuit; noise; passive element; wireless communication; Circuit noise; Doping profiles; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microwave technology; Millimeter wave technology; Silicon germanium; Wireless sensor networks;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.838723
Filename
838723
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