Scalability of Ti-salicide Process for sub-0.1um Gate Lengths: Optimization of Arsenic Preamorphization Process

Author

Sallagoity, P. ; Losavio, A. ; Marangon, T. ; Pipia, F. ; Mastracchio, G.

Author_Institution

STMicroelectronics, Agrate Brianza, Italy

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

644

Lastpage

647

Keywords

CMOS technology; Degradation; Implants; MOS devices; Research and development; Scalability; Silicides; Silicon; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505585

Link To Document