Title :
An 8bit 3GHz Si/SiGe HBT sample-and-hold
Author :
Jensen, Jonathan C. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA
Abstract :
An 8 bit 3 GHz HBT sample-and-hold amplifier (SHA) is demonstrated in a 0.5 μm, 55 GHz Si/SiGe HBT technology. An analysis of the switched-emitter-follower based sample-and-hold, along with improved circuit design techniques to minimize the high frequency sampling errors is presented. The bandwidth and dynamic range of this circuit, at the required sample rate, is superior to other SHNs in silicon technology. The SHA core consumed 90 mA from an 8 V supply.
Keywords :
MMIC amplifiers; bipolar analogue integrated circuits; sample and hold circuits; 0.5 micron; 3 GHz; 55 GHz; 8 V; 90 mA; HBT; Si-SiGe; high frequency sampling error minimization; sample-and-hold amplifier; switched-emitter-follower SHA; Bandwidth; Circuits; Clocks; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Sampling methods; Silicon germanium; Wireless communication;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358911