• DocumentCode
    1950982
  • Title

    [Front matter]

  • fYear
    2002
  • fDate
    2-3 Dec. 2002
  • Abstract
    Presents the front cover of the Third International Workshop on Junction Technology.
  • Keywords
    MOSFET; annealing; ion implantation; semiconductor device models; silicon-on-insulator; MOSFET; annealing; ion implantation; semiconductor device modelling; silicon on insulator; source/drain extension; ultra shallow junction formation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-028-3
  • Type

    conf

  • DOI
    10.1109/IWJT.2002.1225185
  • Filename
    1225185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1950982