Abstract :
Presents the front cover of the Third International Workshop on Junction Technology.
Keywords :
MOSFET; annealing; ion implantation; semiconductor device models; silicon-on-insulator; MOSFET; annealing; ion implantation; semiconductor device modelling; silicon on insulator; source/drain extension; ultra shallow junction formation;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225185
