SOI formation by light ion implantation and annealing in oxygen including atmosphere

We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H/sup +/ and He/sup +/, are implanted into a Si substrate instead of O/sup +/ implantation in the SIMOX (separation of implanted oxygen) process. The atmospheric oxygen atoms precipitate at the implantation damage during high temperature annealing in an oxidized atmosphere. A continuous buried oxide layer was successfully formed in a Si substrate under appropriate conditions, particularly a slow ramping rate and a high oxygen concentration in the atmosphere for the anneal. Partial SOI and SON (Si on nothing) formations were also demonstrated by the technique and showed superior characteristics in both crystalline quality and surface smoothness.