Fabrication of high quality SOI bonding materials by modified direct wafer bonding technique

Author

Grekhov, I.V. ; Kostina, L.S. ; Argunova, T.S. ; Beliakova, E.I. ; Kudriavtseva, T.V. ; Gutkin, M.Yu. ; Kim, E.D. ; Kim, S.G.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

2

fYear

2000

fDate

2000

Firstpage

487

Abstract

A modified direct bonding technique employing a deposition on a wafer to be bonded of silica coating is proposed for the fabrication of Si-SiO₂-Si structures. The structural and electrical quality of bonded compositions is studied. Satisfied insulating properties of interfacial SiO₂ layer are demonstrated. Elastic strain caused by surface morphology in the structures with smooth and artificially grooved interfaces is investigated. The diminution of strain in the grooved structures is semi quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region

Keywords

semiconductor-insulator-semiconductor structures; silicon-on-insulator; wafer bonding; SOI material; Si-SiO₂-Si; Si-SiO₂-Si structure; direct wafer bonding; elastic strain; electrical properties; fabrication; grooved interface; insulating properties; interfacial SiO₂ layer; silica coating; structural properties; surface morphology; virtual defect; Capacitive sensors; Coatings; Dielectric measurements; Fabrication; Independent component analysis; Laser sintering; Silicon compounds; Surface topography; Wafer bonding; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838738

Filename

838738