Title :
Fabrication of high quality SOI bonding materials by modified direct wafer bonding technique
Author :
Grekhov, I.V. ; Kostina, L.S. ; Argunova, T.S. ; Beliakova, E.I. ; Kudriavtseva, T.V. ; Gutkin, M.Yu. ; Kim, E.D. ; Kim, S.G.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
A modified direct bonding technique employing a deposition on a wafer to be bonded of silica coating is proposed for the fabrication of Si-SiO2-Si structures. The structural and electrical quality of bonded compositions is studied. Satisfied insulating properties of interfacial SiO2 layer are demonstrated. Elastic strain caused by surface morphology in the structures with smooth and artificially grooved interfaces is investigated. The diminution of strain in the grooved structures is semi quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region
Keywords :
semiconductor-insulator-semiconductor structures; silicon-on-insulator; wafer bonding; SOI material; Si-SiO2-Si; Si-SiO2-Si structure; direct wafer bonding; elastic strain; electrical properties; fabrication; grooved interface; insulating properties; interfacial SiO2 layer; silica coating; structural properties; surface morphology; virtual defect; Capacitive sensors; Coatings; Dielectric measurements; Fabrication; Independent component analysis; Laser sintering; Silicon compounds; Surface topography; Wafer bonding; X-ray diffraction;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838738
