DocumentCode

1951035

Title

Rapid Thermal Processing for Improved Polysilicon Soi Nmosfets

Author

Chand, Ami ; Chandra, Sudhir ; Rustagi, S.C. ; Bhattacharyya, A.B.

Author_Institution

Indian Institute of Technology

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

92

Lastpage

93

Keywords

Doping; Grain boundaries; Hydrogen; Implants; MOSFETs; Passivation; Plasma displays; Plasma temperature; Rapid thermal annealing; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664810

Filename

664810